DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 942

MCU 5V 128K I-TEMP,PB-FREE, 100-

DF2148RTE20IV

Manufacturer Part Number
DF2148RTE20IV
Description
MCU 5V 128K I-TEMP,PB-FREE, 100-
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheets

Specifications of DF2148RTE20IV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
Host Interface, I²C, IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
74
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Section 26 Electrical Characteristics
Rev. 4.00 Sep 27, 2006 page 896 of 1130
REJ09B0327-0400
4. When IICS = 0. Low-level output when the bus drive function is selected is determined
5. The upper limit of the applied voltage on Ports 6 and A is V
6. Current dissipation values are for V
7. The values are for V
8. For flash memory program/erase operations, the applicable range is V
separately.
not selected, and the lower of V
When a pin is in output mode, the output voltage is equivalent to the applied voltage.
output pins unloaded and the on-chip pull-up MOSs in the off state.
3.6 V.
RAM
V
CC
< 2.7 V, V
CC
+0.3 V and AV
IH
min = V
IH
min = V
CC
–0.2 V, and V
CC
CC
+0.3 V when CIN input is selected.
–0.2 V, and V
CC
IL
+0.3 V when CIN input is
max = 0.2 V with all
IL
max = 0.2 V.
CC
= 3.0 V to

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