DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 915

• Manufacturer Part Number: DF2148RTE20IV
• Description: MCU 5V 128K I-TEMP,PB-FREE, 100-
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148RTE20IV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Item
Output low
voltage
Input
leakage
current
Three-state
leakage
current
(off state)
Input
pull-up
MOS
current
Input
capacitance NMI
Current
dissipation *
Analog
power
supply
current
6
All output pins
(except RESO) *
Ports 1 to 3
RESO
RES
STBY, NMI,
MD1, MD0
Port 7
Ports 1 to 6, 8,
9, A, B
Ports 1 to 3
Ports 6, A, B
Ports 1 to 3
Ports 6, A, B
RES
P52, P97, P42,
P86, PA7 to PA2
Input pins
except (4) above
Normal operation
Sleep mode
Standby mode *
During A/D, D/A
conversion
Idle
7
4
(4)
Symbol Min
V
–I
C
I
Al
CC
I
I
OL
in
P
in
TSI
CC
—
—
—
—
—
—
—
50
60
30
40
—
—
—
—
—
—
—
—
—
—
Rev. 4.00 Sep 27, 2006 page 869 of 1130
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
65
50
0.01
—
1.2
0.01
Section 26 Electrical Characteristics
Max
0.4
1.0
0.4
10.0
1.0
1.0
1.0
300
500
200
400
80
50
20
15
85
70
5.0
20.0
2.0
5.0
Unit
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
pF
pF
pF
pF
mA
mA
µA
µA
mA
µA
REJ09B0327-0400
Test
Conditions
I
I
I
V
V
V
AV
V
V
V
V
5.5 V
V
V
4.5 V
V
f = 1 MHz,
T
f = 16 MHz
f = 16 MHz
T
50°C < T
AV
to 5.5 V
OL
OL
OL
a
a
in
CC
in
in
CC
in
CC
in
CC
in
= 25°C
= 1.6 mA
= 10 mA
= 2.6 mA
= 0.5 to
= 0.5 to
CC
= 0.5 to
= 0 V,
= 0 V,
= 0 V,
CC
–0.5 V
–0.5 V
= 4.5 V to
= 4.0 V to
50°C
–0.5 V
= 2.0 V
a