DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 851

• Manufacturer Part Number: DF2148RTE20IV
• Description: MCU 5V 128K I-TEMP,PB-FREE, 100-
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148RTE20IV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Item
Input low
voltage
Output high
voltage
Output low
voltage
Input
leakage
current
Three-state
leakage
current
(off state)
Input
pull-up
MOS
current
RES, STBY,
MD1, MD0
PA7 to PA0
NMI, EXTAL,
input pins except
(1) and (3)
above
All output pins
(except P97, and
P52 *
P97, P52 *
All output pins
(except RESO) *
Ports 1 to 3
RESO
RES
STBY, NMI,
MD1, MD0
Port 7
Ports 1 to 6, 8,
9, A *
Ports 1 to 3
Ports A *
Port 6
(P6PUE = 0)
Port 6
(P6PUE = 1)
4
8
) *
, B
5
*
8
, B,
8
4
5
(3)
Symbol Min
V
V
V
–I
I
I
IL
OH
OL
P
in
TSI
–0.3
–0.3
–0.3
V
V
3.5
2.0
—
—
—
—
—
—
—
30
60
15
CC
CC
B –0.5
–0.5
Rev. 4.00 Sep 27, 2006 page 805 of 1130
Typ
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Section 26 Electrical Characteristics
Max
0.5
1.0
0.8
—
—
—
0.4
1.0
0.4
10.0
1.0
1.0
1.0
300
600
200
Unit
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
REJ09B0327-0400
Test
Conditions
I
I
I
I
I
I
V
V
V
AV
V
V
V
V
V
OH
OH
OH
OL
OL
OL
in
CC
in
in
CC
in
CC
in
= 1.6 mA
= 10 mA
= 2.6 mA
= –200 µA
= –1 mA
= –200 µA
= 0.5 to
= 0.5 to
CC
= 0.5 to
= 0.5 to
= 0 V
B –0.5 V
–0.5 V
–0.5 V,
–0.5 V