DF2148RTE20IV Renesas Electronics America, DF2148RTE20IV Datasheet - Page 902

• Manufacturer Part Number: DF2148RTE20IV
• Description: MCU 5V 128K I-TEMP,PB-FREE, 100-
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2148RTE20IV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: Host Interface, I²C, IrDA, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 26 Electrical Characteristics
Table 26.37 Timing of On-Chip Supporting Modules (2)
Condition A: V
Condition B: V
Item
HIF read
cycle
HIF write
cycle
Rev. 4.00 Sep 27, 2006 page 856 of 1130
REJ09B0327-0400
CS/HA0 setup
time
CS/HA0 hold time t
IOR pulse width
HDB delay time
HDB hold time
HIRQ delay time
CS/HA0 setup
time
CS/HA0 hold time t
IOW pulse width
HDB
setup
time
HDB hold time
GA20 delay time
operating frequency, T
operating frequency, T
CC
CC
Fast A20
gate not
used
Fast A20
gate used
= 5.0 V ±10%, V
= 3.0 V to 5.5 V, V
Symbol
t
t
t
t
t
t
t
t
t
t
HAR
HRA
HRPW
HRD
HRF
HIRQ
HAW
HWA
HWPW
HDW
HWD
HGA
CC
a
a
B = 5.0 V ±10%, V
Min
10
10
120
—
0
—
10
10
60
30
45
15
—
CC
= –20 to +75°C
= –20 to +75°C
B = 3.0 V to 5.5 V, V
Condition A
20 MHz
Max
—
—
—
100
25
120
—
—
—
—
—
—
90
SS
Min
10
10
220
—
0
—
10
10
100
50
85
25
—
= 0 V, = 2 MHz to maximum
SS
Condition B
= 0 V, = 2 MHz to maximum
10 MHz
Max
—
—
—
200
40
200
—
—
—
—
—
—
180
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Test
Conditions
Figure
26.26