mc9s12hz256v2 Freescale Semiconductor, Inc, mc9s12hz256v2 Datasheet - Page 630
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mc9s12hz256v2
Manufacturer Part Number
mc9s12hz256v2
Description
Hcs12 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MC9S12HZ256V2.pdf
(692 pages)
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Appendix A Electrical Characteristics
A.1.10
This section describes the current consumption characteristics of the device as well as the conditions for
the measurements.
A.1.10.1
All measurements are without output loads. Unless otherwise noted the currents are measured in single
chip mode, internal voltage regulator enabled and at 16MHz bus frequency using a 4MHz oscillator in
Colpitts mode. Production testing is performed using a square wave signal at the EXTAL input.
A.1.10.2
In expanded modes the currents flowing in the system are highly dependent on the load at the address, data
and control signals as well as on the duty cycle of those signals. No generally applicable numbers can be
given. A very good estimate is to take the single chip currents and add the currents due to the external loads.
630
Conditions are shown in
15
16
17
18
19
Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8 C to 12 C in the temper ature range from 50 C to 125 C .
Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for each
8 C to 12 C in the temper ature range from 50 C to 125 C .
Refer to
Parameter only applies in STOP or Pseudo STOP mode.
D Input Capacitance
P Internal Pull Down Device Current,
T Injection current
P Port AD Interrupt Input Pulse filtered
P Port AD Interrupt Input Pulse passed
Section A.1.4, “Current
tested at V
Single Pin limit
Total Device Limit. Sum of all injected currents
Supply Currents
Measurement Conditions
Additional Remarks
IL
Max.
Table A-4
3
Injection,” for more details
unless otherwise noted
MC9S12HZ256 Data Sheet, Rev. 2.05
Table A-6. 5V I/O Characteristics
4
4
t
t
PULSE
PULSE
I
I
I
PDL
C
ICS
ICP
in
–2.5
–25
10
10
–
6
–
Freescale Semiconductor
2.5
25
–
–
3
mA
pF
A
s
s
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