mc9s12hz256v2 Freescale Semiconductor, Inc, mc9s12hz256v2 Datasheet - Page 638
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mc9s12hz256v2
Manufacturer Part Number
mc9s12hz256v2
Description
Hcs12 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MC9S12HZ256V2.pdf
(692 pages)
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Appendix A Electrical Characteristics
A.3.2
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
638
Conditions are shown in
Num C
1
2
3
4
C Data Retention at an average junction temperature of
C Flash number of Program/Erase cycles
C EEPROM number of Program/Erase cycles
C EEPROM number of Program/Erase cycles
T
(–40 C
(0 C < T
Javg
NVM Reliability
= 70 C
All values shown in
extensive characterization.
J
T
J
140 C)
Table A-4
0 C)
Rating
unless otherwise noted
Table A-12. NVM Reliability Characteristics
Table A-12
MC9S12HZ256 Data Sheet, Rev. 2.05
are target values and subject to further
NOTE
t
Symbol
NVMRET
n
n
n
EEPE
EEPE
FLPE
100,000
10,000
1000
Min
15
10,000
Typ
Freescale Semiconductor
Max
Cycles
Cycles
Cycles
Years
Unit
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