DF71251AD50FPV Renesas Electronics America, DF71251AD50FPV Datasheet - Page 606
DF71251AD50FPV
Manufacturer Part Number
DF71251AD50FPV
Description
MCU RISC FLASH 32K 8K 64LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH Tinyr
Datasheet
1.DF71243N50FPV.pdf
(794 pages)
Specifications of DF71251AD50FPV
Core Processor
SH-2
Core Size
32-Bit
Speed
50MHz
Connectivity
SCI
Peripherals
POR, PWM, WDT
Number Of I /o
37
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF71251AD50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 606 of 794
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(2) Download of On-Chip Program
(3) Initialization of Programming/Erasing
(4) Programming/Erasing Execution
(5) When Programming/Erasing is Executed Consecutively
Rev. 5.00 Mar. 06, 2009 Page 586 of 770
REJ09B0243-0500
The on-chip program is automatically downloaded by clearing VBR of the CPU to
H'84000000 and then setting the SCO bit in the flash code control and status register (FCCS)
and the flash key code register (FKEY), which are programming/erasing interface registers.
The user MAT is replaced to the embedded program storage area when downloading. Since the
flash memory cannot be read when programming/erasing, the procedure program, which is
working from download to completion of programming/erasing, must be executed in a space
other than the flash memory to be programmed/erased (for example, on-chip RAM).
Since the result of download is returned to the programming/erasing interface parameters,
whether the normal download is executed or not can be confirmed.
Note that VBR can be changed after download is completed.
The operating frequency and user branch are set before execution of programming/erasing.
The user branch destination must be in an area other than the user MAT area, which is in the
middle of programming and the area where the on-chip program is downloaded. These settings
are performed by using the programming/erasing interface parameters.
To program or erase, the FWE pin must be brought high and user program mode must be
entered.
The program data/programming destination address is specified in 128-byte units when
programming.
The block to be erased is specified in erase-block units when erasing.
These specifications are set by using the programming/erasing interface parameters and the on-
chip program is initiated. The on-chip program is executed by using the JSR or BSR
instruction to perform the subroutine call of the specified address in the on-chip RAM. The
execution result is returned to the programming/erasing interface parameters.
The area to be programmed must be erased in advance when programming flash memory.
There are limitations and notes on the interrupt processing during programming/erasing. For
details, see section 17.7.1, Interrupts during Programming/Erasing.
When the processing is not ended by the 128-byte programming or one-block erasure, the
program address/data and erase-block number must be updated and consecutive
programming/erasing is required.
Since the downloaded on-chip program is left in the on-chip RAM after the processing,
download and initialization are not required when the same processing is executed
consecutively.
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