DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 158

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

6.6.5
Figure 6.22 shows the basic access timing for DRAM space.
The four states of the basic timing consist of one T
output cycle) state, and two T
When DRAM space is accessed, the RD signal is output as the OE signal for DRAM. When
connecting DRAM provided with an EDO page mode, the OE signal should be connected to the
(OE) pin of the DRAM.
Rev. 2.00, 03/04, page 124 of 534
Read
Write
Basic Timing
Figure 6.22 DRAM Basic Access Timing (RAST = 0, CAST = 0)
φ
Address bus
Data bus
Data bus
(
(
(
(
(
,
)
)
)
)
)
c1
and T
c2
T
(column address output cycle) states.
p
Row address
High
High
p
T
(precharge cycle) state, one T
r
T
c1
Column address
T
c2
r
(row address