DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 462

IC H8S/2170 MCU FLASH 100-TQFP

DF2170BVTE33V

Manufacturer Part Number
DF2170BVTE33V
Description
IC H8S/2170 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170BVTE33V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170BVTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
14.5
There are two kinds of flash memory program/erase protection: hardware and software protection.
14.5.1
Programming and erasing of flash memory is forcibly disabled or suspended by hardware
protection. In this state, the downloading of an on-chip program and initialization are possible.
However, an activated program for programming or erasure cannot program or erase locations in a
user MAT, and the error in programming/erasing is reported in the parameter FPFR.
Table 14.10 Hardware Protection
Rev. 2.00, 03/04, page 428 of 534
Item
FWE pin protection
Reset/standby
protection
Protection
Hardware Protection
Description
When a low level signal is input to the
FWE pin, the FWE bit in FCCS is
cleared and the program/erase-
protected state is entered.
The program/erase interface registers
are initialized in the reset state
(including a reset by the WDT) and
standby mode and the program/erase-
protected state is entered.
The reset state will not be entered by
a reset using the RES pin unless the
RES pin is held low until oscillation
has stabilized after power is initially
supplied. In the case of a reset during
operation, hold the RES pin low for the
RES pulse width that is specified in
the section on AC characteristics. If a
reset is input during programming or
erasure, data values in the flash
memory are not guaranteed. In this
case, execute erasure and then
execute program again.
Download
Function to be Protected
Program/Erase

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