DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 432

IC H8S/2170 MCU FLASH 100-TQFP

DF2170BVTE33V

Manufacturer Part Number
DF2170BVTE33V
Description
IC H8S/2170 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170BVTE33V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170BVTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Erasure Execution: When flash memory is erased, the erase-block number on the user MAT
must be passed to the erasing program which is downloaded. This is set to the FEBS parameter
(general register ER0).
One block is specified from the block number 0 to 11.
For details on the erasing processing procedure, see section 14.4.2, User Program Mode.
a Flash erase block select parameter (FEBS: general register ER0 of CPU)
This parameter specifies the erase-block number. The several block numbers cannot be specified.
Rev. 2.00, 03/04, page 398 of 534
Bit
1
0
Bit Name
WA
SF
Initial
Value
R/W
R/W
R/W
Description
Write Address Error Detect
When the following items are specified as the start
address of the programming destination, an error
occurs.
0: Setting of programming destination address is normal
1: Setting of programming destination address is
Success/Fail
Indicates whether the program processing is ended
normally or not.
0: Programming is ended normally (no error)
1: Programming is ended abnormally (error occurs)
abnormal
When the programming destination address in the
area other than flash memory is specified
When the specified address is not in a 128-byte
boundary. (The lower eight bits of the address are
other than H'00 and H'80.)

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