DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 170

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

• RAS Up Mode
Rev. 2.00, 03/04, page 136 of 534
To select RAS up mode, clear the RCDM bit to 0 in DRAMCR. Each time access to DRAM
space is interrupted and another space is accessed, the RAS signal goes high again. Burst
operation is only performed if DRAM space is continuous. Figure 6.35 shows an example of
the timing in RAS up mode.
φ
Address bus
Data bus
Figure 6.35 Example of Operation Timing in RAS Up Mode (RAST = 0, CAST = 0)
(
(
(
,
)
)
)
T
Row address
p
DRAM space read
T
r
Column address 1 Column address 2
T
c1
T
c2
High
T
DRAM space
c1
read
T
c2
External address
Normal space
T
1
read
T
2