DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 533

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

Table 18.3 DC Characteristics (2)
Conditions: V
Notes: 1. Current consumption values are for V
Item
Three-state
leakage current
(off state)
Input
capacitance
Current
consumption*
RAM standby voltage
Vcc start power supply
Vcc rising gradient
2. The values are for V
3. I
4. These values are measured when the RES pin is low.
I
I
output pins unloaded.
CC
CC
CC
max = 6.5 (mA) + 0.49 (mA/(MHz × V)) × V
max = 6.5 (mA) + 0.35 (mA/(MHz × V)) × V
1
depends on V
CC
= 3.0 V to 3.6 V, V
Port 1 to Port 9,
Port A
RES
NMI
All input pins except
RES and NMI
Normal operation
Sleep mode
Standby mode*
CC
and f as follows:
CC
2
= 3.0 V, V
SS
= 0 V
Symbol
| I
C
I
V
V
SV
CC
RAM
CCSTART
in
TSI
*
CC
3
|
IH
min = V
IH
min = V
Min.








3.0


CC
× 0.9, and V
CC
CC
CC
× f (normal operation)
× f (sleep mode)
− 0.2 V and V
Typ.




50
38
30


0

Rev. 2.00, 03/04, page 499 of 534
IL
max = 0.3 V.
Max.
1.0
10
10
10
65
48
90
120

0.8
20
IL
max = 0.2 V with all
Unit
µA
pF
pF
pF
mA
mA
µA
µA
V
V
ms/V
Test
Conditions
V
V
V
f = 1 MHz
T
f = 33 MHz
f = 33 MHz
T
50°C < T
*
*
4
4
a
a
in
CC
in
= 25°C
≤ 50°C
= 0.5 to
= 0 V
− 0.5 V
a