DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 408

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

• Programming/erasing protection
• Programmer mode
Rev. 2.00, 03/04, page 374 of 534
Sets protection against flash memory programming/erasing via hardware, software, or error
protection.
This mode uses the PROM programmer. The user MAT and user boot MAT can be
programmed.
FWE pin
Mode pin
Legend
FCCS:
FPCS:
FECS:
FKEY:
FMATS: Flash MAT select register
FTDAR: Flash transfer destination address register
Flash code control status register
Flash program code select register
Flash erase code select register
Flash key code register
FMATS
FTDAR
FCCS
FPCS
FECS
FKEY
Figure 14.1 Block Diagram of Flash Memory
Operating
mode
Internal data bus (16 bits)
Control unit
Internal address bus
Flash memory
User MAT: 256 kbytes
User boot MAT: 8 kbytes
Memory MAT unit