DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 174

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

6.6.13
When burst mode is selected on the DRAM interface, the DACK output timing can be selected
with the DDS bit in DRAMCR. When DRAM space is accessed in DMAC single address mode at
the same time, this bit selects whether or not burst access is to be performed.
When DDS = 1: Burst access is performed by determining the address only, irrespective of the
bus master. With the DRAM interface, the DACK output goes low from the T
Figure 6.42 shows the DACK output timing for the DRAM interface when DDS = 1.
Rev. 2.00, 03/04, page 140 of 534
φ
Address bus
Data bus
Figure 6.41 Example of Timing when Precharge Time after Self-Refreshing is Extended
(
(
(
,
)
DMAC Single Address Transfer Mode and DRAM Interface
)
)
Software
standby
T
rc3
by 2 States
T
rp1
T
rp2
T
p
DRAM space write
T
r
c1
T
state.
c1
T
c2