DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 411

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

14.1.3
Flash MAT Configuration
This LSI's flash memory is configured by the 256-kbyte user MAT and 8-kbyte user boot MAT.
The start address is allocated to the same address in the user MAT and user boot MAT. Therefore,
when the program execution or data access is performed between two MATs, the MAT must be
switched by using FMATS.
The user MAT or user boot MAT can be read in all modes. However, the user boot MAT can be
programmed only in boot mode and programmer mode.
<User MAT>
<User Boot MAT>
Address H'000000
Address H'000000
8 kbytes
Address H'001FFF
256 kbytes
Address H'03FFFF
Figure 14.3 Flash Memory Configuration
The size of the user MAT is different from that of the user boot MAT. An address which exceeds
the size of the 8-kbyte user boot MAT should not be accessed. If the attempt is made, data is read
as undefined value.
Rev. 2.00, 03/04, page 377 of 534