DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 159

• Manufacturer Part Number: DF2170BVTE33V
• Description: IC H8S/2170 MCU FLASH 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2170BVTE33V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: SCI, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 76
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• For Use With: HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

6.6.6
The column address output cycle can be changed from 2 states to 3 states by setting the CAST bit
to 1 in DRAMCR. Use the setting that gives the optimum specification values (CAS pulse width,
etc.) according to the DRAM connected and the operating frequency of this LSI. Figure 6.23
shows an example of the timing when a 3-state column address output cycle is selected.
Read
Write
Figure 6.23 Example of Access Timing with 3-State Column Address Output Cycle
Column Address Output Cycle Control
φ
Address bus
Data bus
Data bus
(
(
(
(
(
,
)
)
)
)
)
T
p
Row address
(RAST = 0)
High
High
T
r
T
c1
Rev. 2.00, 03/04, page 125 of 534
Column address
T
c2
T
c3