DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 177

IC H8S/2170 MCU FLASH 100-TQFP

DF2170BVTE33V

Manufacturer Part Number
DF2170BVTE33V
Description
IC H8S/2170 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170BVTE33V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170BVTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Consecutive Reads in Different Areas: If consecutive reads in different areas occur while the
IDLE1 and IDLE0 bits in BCR are set to either B'01, B'10, or B'11, an idle cycle which is set by
the IDLC1 and IDLC0 bits in BCR is inserted at the start of the second read cycle.
Figure 6.44 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle for ROM with a long output floating time, and bus cycle B is a read cycle for SRAM, each
being located in a different area. In (a), an idle cycle is not inserted, and a collision occurs in bus
cycle B between the read data from ROM and that from SRAM. In (b), an idle cycle is inserted,
and a data collision is prevented.
Write after Read: If an external write occurs after an external read while the IDLE1 and IDLE0
bits in BCR are set to either B'10 or B'11, an idle cycle which is set by the IDLC1 and IDLC0 bits
in BCR is inserted at the start of the write cycle.
Figure 6.45 shows an example of the operation in this case. In this example, bus cycle A is a read
cycle for ROM with a long output floating time, and bus cycle B is a CPU write cycle. In (a), an
idle cycle is not inserted, and a collision occurs in bus cycle B between the read data from ROM
and the CPU write data. In (b), an idle cycle is inserted, and a data collision is prevented.
Address bus
(area A)
(area B)
Data bus
φ
T
(a) No idle cycle insertion
1
Bus cycle A
Long output floating time
(IDLE1 = 0, IDLE0 = 0)
T
2
Figure 6.44 Example of Idle Cycle Operation
y
(Consecutive Reads in Different Areas)
T
3
Bus cycle B
T
1
T
2
Data collision
Address bus
Data bus
(area A)
(area B)
φ
(b) Idle cycle insertion
T
Rev. 2.00, 03/04, page 143 of 534
1
Bus cycle A
(IDLE1 = 0, IDLE0 = 0, IDLC1 = 0,
IDLC0 = 0)
T
2
T
3
Idle cycle
T
Bus cycle B
i
T
1
T
2

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