DF2170BVTE33V Renesas Electronics America, DF2170BVTE33V Datasheet - Page 178

IC H8S/2170 MCU FLASH 100-TQFP

DF2170BVTE33V

Manufacturer Part Number
DF2170BVTE33V
Description
IC H8S/2170 MCU FLASH 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2170BVTE33V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
SCI, USB
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
76
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)3DK2166 - DEV EVAL KIT H8S/2166
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2170BVTE33V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Read after Write: If an external read occurs after an external write while the IDLE1 and IDLE0
bits in BCR are set to B'11, an idle cycle which is set by the IDLC1 and IDLC0 bits in BCR is
inserted at the start of the read cycle.
Figure 6.46 shows an example of the operation in this case. In this example, bus cycle A is a CPU
write cycle and bus cycle B is a read cycle from the SRAM. In (a), an idle cycle is not inserted,
and a collision occurs in bus cycle B between the CPU write data and read data from the SRAM.
In (b), an idle cycle is inserted, and a data collision is prevented.
Rev. 2.00, 03/04, page 144 of 534
Address bus
Data bus
(area A)
(area B)
φ
Figure 6.45 Example of Idle Cycle Operation (Write after Read)
T
1
(a) No idle cycle insertion
Bus cycle A
Long output floating time
(IDLE1 = 0, IDLE0 = 0)
T
2
y
T
3
Bus cycle B
T
1
T
2
Data collision
Address bus
Data bus
(area A)
(area B)
φ
(b) Idle cycle insertion
T
1
Bus cycle A
(IDLE1 = 0, IDLE0 = 0, IDLC1 = 0,
IDLC0 = 0)
T
2
T
3
Idle cycle
T
i
Bus cycle B
T
1
T
2

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