MCF5307CFT66B Freescale Semiconductor, MCF5307CFT66B Datasheet - Page 238

• Manufacturer Part Number: MCF5307CFT66B
• Description: IC MPU 32BIT 66MHZ COLDF 208FQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF530xr

Specifications of MCF5307CFT66B

• Core Processor: Coldfire V3
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: EBI/EMI, I²C, UART/USART
• Peripherals: DMA, POR, WDT
• Number Of I /o: 16
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-FQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Asynchronous Operation
11.3 Asynchronous Operation
The DRAM controller supports asynchronous DRAMs for cost-effective systems. Typical
access times for the DRAM controller interfacing to ADRAM are 4-3-3-3. The DRAM
controller supports the following four asynchronous modes:
In asynchronous mode, RAS and CAS always transition at the falling clock edge. As
summarized previously, operation and timing of each ADRAM block is controlled by
separate registers, but refresh is the same for both. All ADRAM accesses should be
terminated by the DRAM controller. There is no priority encoding between memory
blocks, so programming blocks to overlap with other blocks or with other internal resources
causes undefined behavior.
11.3.1 DRAM Controller Signals in Asynchronous Mode
Table 11-2 summarizes DRAM signals used in asynchronous mode.
11.3.2 Asynchronous Register Set
The following register configurations apply when DCR[SO] is 0, indicating the DRAM
controller is interfacing to asynchronous DRAMs.
11.3.2.1 DRAM Control Register (DCR) in Asynchronous Mode
The DCR provides programmable options for the refresh logic as well as the control bit to
determine if the module is operating with synchronous or asynchronous DRAMs. The DCR
is shown in Figure 11-2.
RAS[1:0]
CAS[3:0]
DRAMW
11-4
Signal
• Non-page mode
• Burst page mode
• Continuous page mode
• Extended data-out mode
Row address strobes. Interface to RAS inputs on industry-standard ADRAMs. When SDRAMs are used,
these signals interface to the chip-select lines within an SDRAM’s memory block. Thus, there is one RAS
line for each of the two blocks.
Column address strobes. Interface to CAS inputs on industry-standard DRAMs. These provide CAS for
a given ADRAM block. When SDRAMs are used, CAS[3:0] control the byte enables (DQMx) for standard
SDRAMs. CAS[3:0] strobes data in least-to-most significant byte order (CAS0 is MSB).
DRAM read/write. Asserted when a DRAM write cycle is underway. Negated for read bus cycles.
Freescale Semiconductor, Inc.
Table 11-2. SDRAM Signal Summary
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MCF5307 User’s Manual
Description