MCF5307CFT66B Freescale Semiconductor, MCF5307CFT66B Datasheet - Page 239

no-image

MCF5307CFT66B

Manufacturer Part Number
MCF5307CFT66B
Description
IC MPU 32BIT 66MHZ COLDF 208FQFP
Manufacturer
Freescale Semiconductor
Series
MCF530xr
Datasheets

Specifications of MCF5307CFT66B

Core Processor
Coldfire V3
Core Size
32-Bit
Speed
66MHz
Connectivity
EBI/EMI, I²C, UART/USART
Peripherals
DMA, POR, WDT
Number Of I /o
16
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
208-FQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCF5307CFT66B
Manufacturer:
FREESCAL
Quantity:
154
Part Number:
MCF5307CFT66B
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Table 11-3 describes DCR fields.
11.3.2.2 DRAM Address and Control Registers (DACR0/DACR1)
DACR0 and DACR1, Figure 11-3, contain the base address compare value and the control
bits for memory blocks 0 and 1. Address and timing are also controlled by these registers.
Memory areas defined for each block should not overlap; operation is undefined for
accesses in overlapping regions.
15
14
13
12–11
10–9
8–0
Address
Bits
Reset
Field SO
R/W
Name
NAM
RRA
RRP
SO
RC
15
Figure 11-2. DRAM Control Register (DCR) (Asynchronous Mode)
0
Synchronous operation. Selects synchronous or asynchronous mode. A DRAM controller in
synchronous mode can be switched to ADRAM mode only by resetting the MCF5307.
0 Asynchronous DRAMs. Default at reset.
1 Synchronous DRAMs
Reserved, should be cleared.
No address multiplexing. Some implementations require external multiplexing. For example, when
linear addressing is required, the DRAM should not multiplex addresses on DRAM accesses.
0 The DRAM controller multiplexes the external address bus to provide column addresses.
1 The DRAM controller does not multiplex the external address bus to provide column addresses.
Refresh RAS asserted. Determines how long RAS is asserted during a refresh operation.
00 2 clocks
01 3 clocks
10 4 clocks
11 5 clocks
Refresh RAS precharge. Controls how many clocks RAS is precharged after a refresh operation
before accesses are allowed to DRAM.
00 1 clock
01 2 clocks
10 3 clocks
11 4 clocks
Refresh count. Controls refresh frequency. The number of bus clocks between refresh cycles is
(RC + 1) * 16. Refresh can range from 16–8192 bus clocks to accommodate both standard and
low-power DRAMs with bus clock operation from less than 2 MHz to greater than 50 MHz.
The following example calculates RC for an auto-refresh period for 4096 rows to receive 64 mS of
refresh every 15.625 µs for each row (625 bus clocks at 40 MHz).
# of bus clocks = 625 = (RC field + 1) * 16
RC = (625 bus clocks/16) -1 = 38.06, which rounds to 38; therefore, RC = 0x26.
Table 11-3. DCR Field Descriptions (Asynchronous Mode)
14
NAM
13
Chapter 11. Synchronous/Asynchronous DRAM Controller Module
Freescale Semiconductor, Inc.
12
For More Information On This Product,
RRA
11
Go to: www.freescale.com
10
RRP
9
MBAR + 0x100
8
Uninitialized
Description
R/W
RC
Asynchronous Operation
11-5
0

Related parts for MCF5307CFT66B