MCF5307CFT66B Freescale Semiconductor, MCF5307CFT66B Datasheet - Page 246

• Manufacturer Part Number: MCF5307CFT66B
• Description: IC MPU 32BIT 66MHZ COLDF 208FQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF530xr

Specifications of MCF5307CFT66B

• Core Processor: Coldfire V3
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: EBI/EMI, I²C, UART/USART
• Peripherals: DMA, POR, WDT
• Number Of I /o: 16
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-FQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Asynchronous Operation
Figure 11-6 shows a variation of the basic cycle. In this case, RCD is 1, so there are two
clocks between RAS and CAS. Note that the address is multiplexed on the rising clock
immediately before CAS is asserted. Because RNCN = 0, RAS and CAS are negated
together. The next bus cycle is initiated, but because DACRn[RP] requires RAS to be
precharged for two clocks, RAS is delayed for a clock in the bus cycle. Note that this does
not delay the address signals, only RAS.
11.3.3.2 Burst Page-Mode Operation
Burst page-mode operation (DACRn[PM] = 01) optimizes memory accesses in page mode
by allowing a row address to remain registered in the DRAM while accessing data in
different columns. This eliminates the setup and hold times associated with the need to
precharge and assert RAS. Therefore, only the first bus cycle in the page takes the full
access time; subsequent accesses are streamlined. Single accesses look the same as
non-page-mode accesses.
Burst page-mode accesses of any size—byte, word, longword, or line—are assumed to
reside in the same page. In this mode, the DRAM controller generates a burst transfer only
when the operand is larger than the DRAM block port size (such as, a line transfer to a
32-bit port or a longword transfer to an 8-bit port). The primary cycle asserts RAS and
CAS; subsequent cycles assert only CAS. At the end of the access, RAS is precharged. The
DRAM controller increments addresses between cycles.
Figure 11-7 shows a read access in burst page mode. Four accesses take place, which could
be a 32-bit access to an 8-bit port or a line access to a 32-bit port. Other burst page-mode
operations may be from 2 to 16 accesses long, depending on the access and port sizes. In
those cases, timing is similar with more or fewer accesses.
11-12
RAS[1] or [0]
CAS[3:0]
DRAMW
Figure 11-6. Basic Non-Page-Mode Operation RCD = 1, RNCN = 0 (5-5-5-5)
BCLKO
D[31:0]
A[31:0]
Row
RCD = 1
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MCF5307 User’s Manual
CAS = 01
RNCN = 0
RP = 01