TMP89xy60UG/FG Toshiba, TMP89xy60UG/FG Datasheet - Page 419
![no-image](/images/manufacturer_photos/0/6/668/toshiba_sml.jpg)
TMP89xy60UG/FG
Manufacturer Part Number
TMP89xy60UG/FG
Description
Manufacturer
Toshiba
Datasheet
1.TMP89XY60UGFG.pdf
(432 pages)
Specifications of TMP89xy60UG/FG
Package
LQFP64/QFP64
Rom Types (m=mask,p=otp,f=flash)
M/F
Rom Size
32/60
Ram Size
3K
Driver Led
8
Driver Lcd
-
Spi/sio Channels
-
Uart/sio Channels
2
I2c/sio Channels
1
High-speed Serial Output
-
Adc 8-bit Channels
-
Adc 10-bit Channels
16
Da Converter Channels
-
Timer Counter 18-bit Channel
-
Timer Counter 16-bit Channel
2
Timer Counter 8-bit Channel
4
Motor Channels
-
Watchdog Timer
Y
Dual Clock
Y
Clock Gear
Y
Number Of I/o Ports
58
Power Supply (v)
4.3 to 5.5
- Current page: 419 of 432
- Download datasheet (7Mb)
RA004
Supply current in NOR-
MAL 1, 2 modes
(Note 7)
Supply current in
IDLE0, 1, 2 modes
Supply current in
SLOW1 mode
(Notes 5 and 7)
Supply current in
SLEEP1 mode
Supply current in
SLEEP0 mode
Supply current in STOP
mode
Peak current of inter-
mittent operation
(Notes 7 and 9)
Current for writing to
flash memory, erasing
and security program
(Notes 4, 8 and 9)
Parameter
Note 1: Typical values shown are Topr = 25°C and V
Note 2: I
Note 3: V
Note 4: When performing a write or erase on the flash memory or activating a security program in the flash memory, make sure
Note 5: In SLOW1 mode, the difference between the peak current and the average current becomes large.
Note 6: Each supply current in SLOW2 mode is equivalent to that in IDLE0, IDLE1 and IDLE2 modes.
Note 7: When a program operates in the flash memory or when data is being read from the flash memory, the flash memory
Note 8: If a write or erase is performed on the flash memory or a security program is enabled in the flash memory, an instantaneous
Note 9: The circuit of a power supply must be designed such as to enable the supply of a peak current. This peak current causes
that the operating temperature Topr is within the range −10°C to 40°C. If the temperature is outside this range, the resultant
performance cannot be guaranteed.
operates intermittently, and a peak current flows, as shown in Figure 25-4. In this case, the supply current I
MAL1, NORMAL2 and SLOW1 modes) is defined as the sum of the average peak current and MCU current.
peak current flows, as shown in Figure 25-5.
the supply voltage in the device to fluctuate. Connect a bypass capacitor of about 0.1 μF near the power supply of the
device to stabilize its operation.
DD
IN
does not include I
: The input voltage on the pin except MODE pin, V
(Note 8)
Symbol
I
DDRP-P
I
DDEW
I
DD
REF
. It is the electrical current in the state in which the peripheral circuitry has been operated.
Pins
Page 403
DD
V
V
V
fcgck = 8.0 MHz
fs = 32.768 kHz
V
V
V
fs = 32.768 kHz
V
V
V
V
V
V
V
V
V
V
V
V
= 5.0 V, unless otherwise specified.
DD
IN
MODE
DD
IN
MODE
DD
IN
MODE
DD
IN
MODE
DD
IN
MODE
DD
IN
MODE
= 5.3 V/0.2 V
= 2.8 V/0.2 V
= 5.3 V/0.2 V
= 5.3 V/0.2 V
= 2.8 V/0.2 V
= 5.3 V/0.2 V
= 5.5 V
= 3.0 V
= 5.5 V
= 5.5 V
= 3.0V
= 5.5 V
=5.3V/0.1V
=2.8V/0.1V
=5.3V/0.1V
=5.3V/0.1V
=2.8V/0.1V
=5.3V/0.1V
MODE
: The input voltage on the MODE pin
Condition
When a program
operates on flash
memory
When a program
operates on RAM
When a program
operates on flash
memory
When a program
operates on RAM
(FLSSTB<FSTB>=
0)
When a program
operates on RAM
(FLSSTB<FSTB>=
1)
When a program
operates on flash
memory or when
data is being read
from flash memory
Min
−
−
−
−
−
−
−
−
−
−
−
−
(V
SS
Typ.
17.0
25.0
20.0
15.0
12.0
10.0
10.0
10.0
26.0
= 0 V, Topr = −40 to 85°C)
7.5
5.0
2.0
TMP89FS60
20.0
10.0
43.0
38.0
33.0
25.0
23.0
25.0
Max
7.0
−
−
−
DD
(in NOR-
Unit
mA
mA
μA
Related parts for TMP89xy60UG/FG
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MG100Q2YS65H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG30G6EL2](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MP6759](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG400J101H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG30J103H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG600J2YS60A](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG1200V1US51](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG300J101H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG150J7KS50](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG15J503H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG75J6CSB1W](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG75J201H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG400J2YS60A](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG50J7CSB1W](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG300J2YS40](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: