DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 209

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

9.7.3
If a compare-match occurs during the state after an OCRA or OCRB write cycle, the write takes
priority and the compare-match signal is disabled. Figure 9.19 shows the timing for this type of
conflict.
If automatic addition of OCRAR and OCRAF to OCRA is selected, and a compare-match occurs
in the cycle following the OCRA, OCRAR, and OCRAF write cycle, the OCRA, OCRAR and
OCRAF write takes priority and the compare-match signal is disabled. Consequently, the result of
the automatic addition is not written to OCRA. Figure 9.20 shows the timing for this type of
conflict.
Conflict between OCR Write and Compare-Match
Figure 9.19 Conflict between OCR Write and Compare-Match
φ
Address
Internal write
signal
FRC
OCR
Compare-match
signal
(When Automatic Addition Function Is Not Used)
Write cycle of OCR
T 1
OCR address
T 2
N
N
Section 9 16-Bit Free-Running Timer (FRT)
Rev. 2.00 Mar 21, 2006 page 169 of 518
Write data
M
N + 1
Disabled
REJ09B0299-0200