DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 449

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

This LSI has an on-chip ROM (flash memory or masked ROM). The features of the flash memory
are summarized below.
A block diagram of the flash memory is shown in figure 17.1.
17.1
Product Classification
H8S/2110B
Size
Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.
The flash memory is configured as follows:
To erase the entire flash memory, each block must be erased in turn.
Programming/erase time
It takes 10 ms (typ.) to program the flash memory 128 bytes at a time; 80 µs (typ.) per 1 byte.
Erasing one block takes 100 ms (typ.).
Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
Two flash memory on-board programming modes
On-board programming/erasing can be done in boot mode in which the boot program built into
the chip is started for erase or programming of the entire flash memory. In user program mode,
individual blocks can be erased or programmed.
Automatic bit rate adjustment
With data transfer in boot mode, this LSI's bit rate can be automatically adjusted to match the
transfer bit rate of the host.
Programming/erasing protection
Sets protection against flash memory programming/erasing via hardware, software, or error
protection.
8 k6bytes
Boot mode
User program mode
Features
2 blocks, 16 kbytes
ROM Capacitance
64 kbytes
Section 17 ROM
1 block, 28 kbytes 1 block, and 1 kbyte
Rev. 2.00 Mar 21, 2006 page 409 of 518
ROM Address
H'000000 to H'00FFFF (mode 2)
H'0000 to H'DFFF (mode 3)
REJ09B0299-0200
Section 17 ROM
4 blocks