DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 530

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

Section 21 Electrical Characteristics
Table 21.2 DC Characteristics (2)
Conditions: V
Input
leakage
current
Three-state
leakage
current
(off state)
Input
pull-up
MOS
current
Input
capacitance
Current
dissipation *
RAM standby voltage
Notes: 1. Current dissipation values are for V
Rev. 2.00 Mar 21, 2006 page 490 of 518
REJ09B0299-0200
2. The values are for V
3. The port A characteristics depend on V
V
state.
V
on V
1
IL
IL
RES
STBY, NMI, MD1,
MD0
Ports 1 to 9, A *
Ports 1 to 3
Ports 6 (P6PUE = 0)
and B
Port A *
Port 6 (P6PUE = 1)
RES
NMI
P52, P97, P42,
P86, PA7 to PA2
Input pins except (4)
above
Normal operation
Sleep mode
Standby mode *
max = 0.2 V with all output pins unloaded and the on-chip pull-up MOSs in the off
max = 0.2 V.
CC
Item
CC
= 3.0 V to 3.6 V, V
.
3
3
2
, and B I
(4)
RAM
V
CC
Symbol Min
–I
C
I
V
CC
CC
B = 3.0 V to 5.5 V, V
I
RAM
in
P
in
TSI
< 3.0 V, V
IH
—
—
—
5
30
30
3
—
—
—
—
—
—
—
—
2.0
min = V
CC
IH
B, and the other pins characteristics depend
min = V
CC
– 0.2 V, V
Typ
—
—
—
—
—
—
—
—
8
—
30
20
1
—
—
CC
—
SS
– 0.2 V, V
= 0 V, T
Max
10.0
1.0
1.0
150
300
600
100
80
50
20
15
40
32
5.0
20.0
—
CC
B – 0.2 V, and
a
= –20 to +75°C
CC
B – 0.2 V, and
Unit
µA
µA
µA
pF
mA
µA
V
Test
Conditions
V
V
V
V
V
V
V
V
3.6 V
V
to 5.5 V
V
f = 1 MHz,
T
f = 10 MHz
f = 10 MHz
T
50°C < T
a
a
in
CC
in
CC
in
CC
in
CC
CC
in
= 25°C
= 0.5 to
= 0.5 to
= 0.5 to
= 0 V,
= 0 V,
B – 0.5 V
B = 3.0 V
– 0.5 V
– 0.5 V,
= 3.0 V to
50°C
a