DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 465

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

17.8
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. Depending on the FLMCR1 and FLMCR2 settings, the flash memory
operates in one of the following four modes: program mode, program-verify mode, erase mode,
and erase-verify mode. The programming control program in boot mode and the user
program/erase control program in user program mode use these operating modes in combination to
perform programming/erasing. Flash memory programming and erasing should be performed in
accordance with the descriptions in section 17.8.1, Program/Program-Verify and section 17.8.2,
Erase/Erase-Verify, respectively.
17.8.1
When writing data or programs to the flash memory, the program/program-verify flowchart shown
in figure 17.9 should be followed. Performing programming operations according to this flowchart
will enable data or programs to be written to the flash memory without subjecting this LSI to
voltage stress or sacrificing program data reliability.
1. Programming must be done to an empty address. Do not reprogram an address to which
2. Programming should be carried out 128 bytes at a time. A 128-byte data transfer must be
3. Prepare the following data storage areas in RAM: a 128-byte programming data area, a 128-
4. Consecutively transfer 128 bytes of data in byte units from the reprogramming data area or
5. The time during which the P bit is set to 1 is the programming time. Figure 17.9 shows the
6. The watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
7. For a dummy write to a verify address, write 1-byte data H'FF to an address whose lower 2 bits
programming has already been performed.
performed even if writing fewer than 128 bytes. In this case, H'FF data must be written to the
extra addresses.
byte reprogramming data area, and a 128-byte additional-programming data area. Perform
reprogramming data computation and additional programming data computation according to
figure 17.9.
additional-programming data area to the flash memory. The program address and 128-byte
data are latched in the flash memory. The lower 8 bits of the start address in the flash memory
destination area must be H'00 or H'80.
allowable programming times.
The overflow cycle should be longer than (y + z2 +
are B'00. Verify data can be read in words from the address to which a dummy write was
performed.
Flash Memory Programming/Erasing
Program/Program-Verify
Rev. 2.00 Mar 21, 2006 page 425 of 518
+ ) s.
REJ09B0299-0200
Section 17 ROM