DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 480

MCU 3V 64K 100-TQFP

DF2110BVTE10

Manufacturer Part Number
DF2110BVTE10
Description
MCU 3V 64K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2110BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
82
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2110BVTE10
HD64F2110BVTE10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2110BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 18 Clock Pulse Generator
18.8.2
When using a crystal resonator, the crystal resonator and its load capacitors should be placed as
close as possible to the XTAL and EXTAL pins.
Other signal lines should be routed away from the oscillator circuit to prevent inductive
interference with the correct oscillation as shown in figure 18.8.
Rev. 2.00 Mar 21, 2006 page 440 of 518
REJ09B0299-0200
Notes on Board Design
Figure 18.8 Note on Board Design of Oscillator Circuit Section
Avoid
C
C
L2
L1
Signal A Signal B
XTAL
EXTAL
This LSI

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