DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 536

MCU 3V 64K 100-TQFP

DF2110BVTE10

Manufacturer Part Number
DF2110BVTE10
Description
MCU 3V 64K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2110BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
82
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2110BVTE10
HD64F2110BVTE10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2110BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 21 Electrical Characteristics
Table 21.7 Timing of On-Chip Peripheral Modules
Conditions: V
Item
I/O ports
FRT
TMR
PWMX
SCI
WDT
Note: * Only peripheral modules that can be used in subclock operation
Rev. 2.00 Mar 21, 2006 page 496 of 518
REJ09B0299-0200
Output data delay time
Input data setup time
Input data hold time
Timer output delay time
Timer input setup time
Timer clock input setup time
Timer clock
pulse width
Timer output delay time
Timer reset input setup time
Timer clock input setup time
Timer clock
pulse width
Pulse output delay time
Input clock
cycle
Input clock pulse width
Input clock rise time
Input clock fall time
Transmit data delay time
(synchronous)
Receive data setup time
(synchronous)
Receive data hold time
(synchronous)
RESO output delay time
RESO output pulse width
2 MHz to maximum operating frequency, T
CC
= 3.0 V to 3.6 V, V
Single edge
Both edges
Single edge
Both edges
Asynchronous
Synchronous
CC
B = 3.0 V to 5.5 V, V
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PWD
PRS
PRH
FTOD
FTIS
FTCS
FTCWH
FTCWL
TMOD
TMRS
TMCS
TMCWH
TMCWL
PWOD
Scyc
SCKW
SCKr
SCKf
TXD
RXS
RXH
RESD
RESOW
Min
50
50
50
50
1.5
2.5
50
50
1.5
2.5
4
6
0.4
100
100
132
a
= –20 to +75°C
Condition
10 MHz
SS
= 0 V, = 32.768 kHz * ,
Max
100
100
100
100
0.6
1.5
1.5
100
200
Unit
ns
ns
t
ns
t
ns
t
t
t
ns
ns
t
cyc
cyc
cyc
Scyc
cyc
cyc
Test Conditions
Figure 21.10
Figure 21.11
Figure 21.12
Figure 21.13
Figure 21.15
Figure 21.14
Figure 21.16
Figure 21.17
Figure 21.18
Figure 21.19

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