DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 539

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

21.1.4
Table 21.11 shows the flash memory characteristics.
Table 21.11 Flash Memory Characteristics
Conditions: V
Item
Programming time *
Erase time *
Reprogramming count
Programming
Flash Memory Characteristics
1
*
3
*
Wait time after
SWE-bit setting *
Wait time after
PSU-bit setting *
Wait time after
P-bit setting *
Wait time after
P-bit clear *
Wait time after
PSU-bit clear *
Wait time after
PV-bit setting *
Wait time after
dummy write *
Wait time after
PV-bit clear *
Wait time after
SWE-bit clear *
Maximum
programming
count *
CC
6
= 3.0 V to 3.6 V, V
1
*
2
1
*
*
4
4
*
5
1
1
1
*
1
1
1
4
1
1
1
Symbol Min
t
t
N
x
y
z1
z2
z3
N
P
E
WEC
SS
= 0 V, T
—
—
—
1
50
28
198
8
5
5
4
2
2
100
—
a
= –20 to +75°C
Typ
10
100
—
—
—
30
200
10
—
—
—
—
—
—
—
Rev. 2.00 Mar 21, 2006 page 499 of 518
Section 21 Electrical Characteristics
Max
200
1200
100
—
—
32
202
12
—
—
—
—
—
—
1000
Unit
ms/
128 bytes
ms/
block
times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
times
REJ09B0299-0200
Test
Condition
1
7
Additional
write
n
n
6
1000