DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 528

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

Section 21 Electrical Characteristics
21.1.2
Table 21.2 lists the DC characteristics. Permitted output current values and bus drive
characteristics are shown in tables 21.3 and 21.4, respectively.
Table 21.2 DC Characteristics (1)
Conditions: V
Schmitt
trigger input
voltage
Schmitt
trigger input
voltage (in
level
switching) *
Input high
voltage
Rev. 2.00 Mar 21, 2006 page 488 of 518
REJ09B0299-0200
DC Characteristics
6
P67 to P60 *
KIN15 to KIN8,
IRQ2 to IRQ0,
IRQ5 to IRQ3
P67 to P60
(KWUL = 00)
P67 to P60
(KWUL = 01)
P67 to P60
(KWUL = 10)
P67 to P60
(KWUL = 11)
RES, STBY,
NMI, MD1, MD0
EXTAL
PA7 to PA0
CC
Item
= 3.0 V to 3.6 V, V
1
,
(1) *
(2)
4
CC
Symbol Min
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
B = 3.0 V to 5.5 V, V
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
IH
–
+
+
–
+
+
–
+
+
–
+
+
–
+
+
– V
– V
– V
– V
– V
T
T
T
T
T
–
–
–
–
–
V
V
—
V
V
V
—
V
V
—
V
V
—
V
V
—
0.05
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
B
B
B
0.2
0.05
0.2
0.05
0.3
0.05
0.4
0.03
0.45
0.9
0.7
0.2
0.05
0.7
SS
= 0 V, T
Typ Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
V
—
—
V
—
—
V
—
—
V
—
—
V
—
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
CC
a
B
B
= –20 to +75°C
+ 0.3
+ 0.3
0.7
0.7
0.7
0.8
0.9
0.7
0.3
Unit
V
V
V
Test
Conditions