DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 92

MCU 3V 64K 100-TQFP

DF2110BVTE10

Manufacturer Part Number
DF2110BVTE10
Description
MCU 3V 64K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2110BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
82
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2110BVTE10
HD64F2110BVTE10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2110BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 3 MCU Operating Modes
Bit
1
0
Rev. 2.00 Mar 21, 2006 page 52 of 518
REJ09B0299-0200
Bit Name
HIE
RAME
Initial Value
0
1
R/W
R/W
R/W
Controls CPU access to the keyboard matrix interrupt,
input pull-up MOS control registers (KMIMR, KMPCR,
and KMIMRA), and the 8-bit timer (TMR_X and
TMR_Y) registers (TCR_X/TCR_Y, TCSR_X/TCSR_Y,
TICRR/TCORA_Y, TICRF/TCORB_Y,
TCNT_X/TCNT_Y, TCORC/TISR, TCORA_X, and
TCORB_X, TCONRI, and TCONRS).
0: In areas H'(FF)FFF0 to H'(FF)FFF7 and H'(FF)FFFC
to H'(FF)FFFF, CPU access to 8-bit timer (TMR_X and
TMR_Y) is permitted.
1: In areas H'(FF)FFF0 to H'(FF)FFF7 and H'(FF)FFFC
to H'(FF)FFFF, CPU access to keyboard matrix
interrupt and input pull-up MOS control registers is
permitted.
Enables or disables on-chip RAM. The RAME bit is
initialized when the reset state is released.
0: On-chip RAM is disabled
1: On-chip RAM is enabled
Description
Host Interface Enable
RAM Enable

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