DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 464

• Manufacturer Part Number: DF2110BVTE10
• Description: MCU 3V 64K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2110BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 82
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Data Converters: -
• Other names: HD64F2110BVTE10; HD64F2110BVTE10

Section 17 ROM
17.7.2
On-board programming/erasing of an individual flash memory block can also be performed in user
program mode by branching to a user program/erase control program. The user must set branching
conditions and provide on-board means of supplying programming data. The flash memory must
contain the user program/erase control program or a program which provides the user
program/erase control program from external memory. Because the flash memory itself cannot be
read during programming/erasing, transfer the user program/erase control program to on-chip
RAM, as like in boot mode. Figure 17.8 shows a sample procedure for programming/erasing in
user program mode. Prepare a user program/erase control program in accordance with the
description in section 17.8, Flash Memory Programming/Erasing.
Rev. 2.00 Mar 21, 2006 page 424 of 518
REJ09B0299-0200
Figure 17.8 Programming/Erasing Flowchart Example in User Program Mode
User Program Mode
Execute user program/erase control
program (flash memory rewrite)
erase control program to RAM
erase control program in RAM
Branch to user program/
Branch to flash memory
Transfer user program/
application program
Program/erase?
Reset-start
Yes
No
Branch to flash memory
application program