DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 455

MCU 3V 64K 100-TQFP

DF2110BVTE10

Manufacturer Part Number
DF2110BVTE10
Description
MCU 3V 64K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2110BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
82
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2110BVTE10
HD64F2110BVTE10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2110BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
17.4
The flash memory is controlled by means of the pins shown in table 17.2.
Table 17.2 Pin Configuration
17.5
The flash memory has the following registers. To access FLMCR1, FLMCR2, EBR1, or EBR2,
the FLSHE bit in the serial/timer control register (STCR) should be set to 1. For details on the
serial/timer control register, refer to section 3.2.3, Serial Timer Control Register (STCR).
Pin Name
RES
MD1
MD0
P92
P91
P90
TxD1
RxD1
Flash memory control register 1 (FLMCR1)
Flash memory control register 2 (FLMCR2)
Erase block register 1 (EBR1)
Erase block register 2 (EBR2)
Register Descriptions
Input/Output Pins
I/O
Input
Input
Input
Input
Input
Input
Output
Input
Function
Reset
Sets this LSI’s operating mode
Sets this LSI’s operating mode
Sets this LSI’s operating mode
Sets this LSI’s operating mode
Sets this LSI’s operating mode
Serial transmit data output
Serial receive data input
Rev. 2.00 Mar 21, 2006 page 415 of 518
REJ09B0299-0200
Section 17 ROM

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