DF2110BVTE10 Renesas Electronics America, DF2110BVTE10 Datasheet - Page 242

MCU 3V 64K 100-TQFP

DF2110BVTE10

Manufacturer Part Number
DF2110BVTE10
Description
MCU 3V 64K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2110BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
82
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Data Converters
-
Other names
HD64F2110BVTE10
HD64F2110BVTE10

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2110BVTE10V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 10 8-Bit Timer (TMR)
10.9.2
If a count-up occurs during the T
counter write takes priority and the counter is not incremented.
Rev. 2.00 Mar 21, 2006 page 202 of 518
REJ09B0299-0200
Address
Internal write signal
Counter clear signal
TCNT
Address
Internal write signal
TCNT input clock
TCNT
Conflict between TCNT Write and Count-Up
Figure 10.14 Conflict between TCNT Write and Count-Up
Figure 10.13 Conflict between TCNT Write and Clear
2
state of a TCNT write cycle as shown in figure 10.14, the
TCNT write cycle by CPU
TCNT write cycle by CPU
T 1
T 1
N
N
TCNT address
TCNT address
T 2
T 2
Counter write data
H'00
M

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