UPD78F1000GB-GAF-AX Renesas Electronics America, UPD78F1000GB-GAF-AX Datasheet - Page 1125

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UPD78F1000GB-GAF-AX

Manufacturer Part Number
UPD78F1000GB-GAF-AX
Description
MCU 16BIT 78K0R/KX3-L 44-LQFP
Manufacturer
Renesas Electronics America
Series
78K0R/Kx3-Lr
Datasheet

Specifications of UPD78F1000GB-GAF-AX

Core Processor
78K/0R
Core Size
16-Bit
Speed
20MHz
Connectivity
3-Wire SIO, I²C, LIN, UART/USART
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
33
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD78F1000GB-GAF-AX
Manufacturer:
Renesas Electronics America
Quantity:
10 000
78K0R/Kx3-L
31.7 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
(T
Note The value depends on the POC detection voltage. When the voltage drops, the data is retained before a POC
31.8 Flash Memory Programming Characteristics
(T
Remark When updating data multiple times, use the flash memory as one for updating data.
R01UH0106EJ0300 Rev.3.00
Oct 01, 2010
Data retention supply voltage
V
Number of rewrites (number of
deletes per block)
A
A
DD
Caution The pins mounted depend on the product. Refer to Caution 2 at the beginning of this chapter.
= −40 to +85°C)
= −40 to +85°C, 1.8 V ≤ V
supply current
V
reset is effected, but data is not retained when a POC reset is effected.
Standby release signal
DD
(interrupt request)
Parameter
Parameter
STOP instruction execution
DD
CHAPTER 31 ELECTRICAL SPECIFICATIONS (78K0R/KF3-L, 78K0R/KG3-L)
= EV
I
C
Symbol
DD
V
Symbol
erwr
DDDR
DD0
= EV
Typ. = 10 MHz, Max. = 20 MHz
Used for updating programs
When using flash memory programmer and
Renesas Electronics self programming library
Used for updating data
When using Renesas Electronics EEPROM
emulation library (available ROM area: 3 to 8
KB of 3 to 8 continuous blocks )
DD1
V
≤ 5.5 V, V
DDDR
Data retention mode
STOP mode
Conditions
Conditions
SS
= EV
SS0
= EV
SS1
= 0 V)
1.5
MIN.
Retaine
d for 15
years
Retaine
d for 5
years
MIN.
Note
TYP.
10,000
1,000
TYP.
6
Operation mode
MAX.
MAX.
5.5
20
Times
Times
Unit
Unit
mA
V
1125

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