UPD78F1000GB-GAF-AX Renesas Electronics America, UPD78F1000GB-GAF-AX Datasheet - Page 990

• Manufacturer Part Number: UPD78F1000GB-GAF-AX
• Description: MCU 16BIT 78K0R/KX3-L 44-LQFP
• Manufacturer: Renesas Electronics America
• Series: 78K0R/Kx3-Lr

Specifications of UPD78F1000GB-GAF-AX

• Core Processor: 78K/0R
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: 3-Wire SIO, I²C, LIN, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 33
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

78K0R/Kx3-L
26.9 Flash Memory Programming by Self-Programming
program.
programming library, it can be used to upgrade the program in the field.
can be executed. If an unmasked interrupt request is generated in the EI state, the request branches directly from the
self-programming library to the interrupt routine. After the self-programming mode is later restored, self-programming can
be resumed. However, the interrupt response time is different from that of the normal operation mode.
for which the voltage range in which to write, erase, or verify data differs.
01H when the FSL_Init function of the self programming library provided by Renesas Electronics is executed, wide-voltage
mode is specified. If the constant is 00H, full-speed mode is specified.
R01UH0106EJ0300 Rev.3.00
Oct 01, 2010
The 78K0R/Kx3-L supports a self-programming function that can be used to rewrite the flash memory via a user
If an interrupt occurs during self-programming, self-programming can be temporarily stopped and interrupt servicing
Cautions 1. The self-programming function cannot be used when the CPU operates with the subsystem clock.
Remarks 1. For details of the self-programming function and the 78K0R/Kx3-L self-programming library, refer to
Similar to when writing data by using the flash memory programmer, there are two flash memory programming modes
Specify the mode that corresponds to the voltage range in which to write data. If the constant fsl_low_voltage_u08 is
Table 26-12. Programming Modes and Voltages at Which Data Can Be Written, Erased, or Verified
Because this function allows a user application to rewrite the flash memory by using the 78K0R/Kx3-L self-
Wide voltage mode
Caution
Full speed mode
2. In the self-programming mode, call the self-programming start library (FlashStart).
3. To prohibit an interrupt during self-programming, in the same way as in the normal operation
4. Disable DMA operation (DENn = 0) during the execution of self programming library
2. For details of the time required to execute self programming, see the notes on use that accompany the
mode, execute the self-programming library in the state where the IE flag is cleared (0) by the DI
instruction. To enable an interrupt, clear (0) the interrupt mask flag to accept in the state where
the IE flag is set (1) by the EI instruction, and then execute the self-programming library.
functions.
78K0R Microcontroller Self Programming Library Type2 User’s Manual (U19193E).
flash self programming library tool.
Mode
If data was erased in wide-voltage mode, data can be written or verified only in wide-
voltage mode. However, such data can be written or verified in full-speed mode after re-
erasing the data in full-speed mode.
Voltages at which data can be written, erased, or verified
1.8 V to 5.5 V
2.7 V to 5.5 V
CHAPTER 26 FLASH MEMORY
Writing Clock Frequency
20 MHz (MAX.)
4 MHz (MAX.)
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