HD6417712BPV Renesas Electronics America, HD6417712BPV Datasheet - Page 443

• Manufacturer Part Number: HD6417712BPV
• Description: MPU 1.5/3.3V 0K PB-FREE 256-BGA
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH Ethernetr

Specifications of HD6417712BPV

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, Ethernet, FIFO, SCI, SIO
• Peripherals: DMA, POR, WDT
• Number Of I /o: 24
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.4 V ~ 1.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 256-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

Section 12 Bus State Controller (BSC)
12.5.5
SDRAM Interface
SDRAM Direct Connection: The SDRAM that can be connected to this LSI is a product that has
11/12/13 bits of row address, 8/9/10 bits of column address, 4 or less banks, and uses the A10 pin
for setting precharge mode in read and write command cycles.
The control signals for direct connection of SDRAM are RAS, CAS, RD/WR, DQMUU,
DQMUL, DQMLU, DQMLL, CKE, CS2, and CS3. All the signals other than CS2 and CS3 are
common to all areas, and signals other than CKE are valid when CS2 or CS3 is asserted. SDRAM
can be connected to up to 2 spaces. The data bus width of the area that is connected to SDRAM
can be set to 32 or 16 bits.
Burst read/single write (burst length 1) and burst read/burst write (burst length 1) are supported as
the SDRAM operating mode.
Commands for SDRAM can be specified by RAS, CAS, RD/WR, and specific address signals.
These commands are shown below.
• NOP
• Auto-refresh (REF)
• Self-refresh (SELF)
• All banks precharge (PALL)
• Specified bank precharge (PRE)
• Bank active (ACTV)
• Read (READ)
• Read with precharge (READA)
• Write (WRIT)
• Write with precharge (WRITA)
• Write mode register (MRS)
The byte to be accessed is specified by DQMUU, DQMUL, DQMLU, and DQMLL. Reading or
writing is performed for a byte whose corresponding DQMxx is low. For details on the
relationship between DQMxx and the byte to be accessed, refer to section 12.5.1, Endian/Access
Size and Data Alignment.
Figures 12.12 and 12.13 show examples of the connection of the SDRAM with the LSI.
Rev. 1.00 Dec. 27, 2005 Page 399 of 932
REJ09B0269-0100