HD6417712BPV Renesas Electronics America, HD6417712BPV Datasheet - Page 463
HD6417712BPV
Manufacturer Part Number
HD6417712BPV
Description
MPU 1.5/3.3V 0K PB-FREE 256-BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH Ethernetr
Datasheet
1.HD6417712BPV.pdf
(980 pages)
Specifications of HD6417712BPV
Core Processor
SH-3 DSP
Core Size
32-Bit
Speed
200MHz
Connectivity
EBI/EMI, Ethernet, FIFO, SCI, SIO
Peripherals
DMA, POR, WDT
Number Of I /o
24
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.4 V ~ 1.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
256-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD6417712BPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 463 of 980
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Section 12 Bus State Controller (BSC)
Burst Write: A burst write occurs in the following cases in this LSI.
1. Access size in writing is larger than data bus width.
2. Copyback of the cache
3. 16-byte transfer in DMAC or E-DMAC (access to non-cachable region)
This LSI always accesses SDRAM with burst length 1. For example, write access of burst length 1
is performed continuously 4 times to write 16-byte continuous data to the SDRAM that is
connected to a 32-bit data bus. The relationship between the access size and the number of bursts
is shown in table 12.18.
Figure 12.17 shows a timing chart for burst writes. In burst write, an ACTV command is output in
the Tr cycle, the WRIT command is issued in the Tc1, Tc2, and Tc3 cycles, and the WRITA
command is issued to execute an auto-precharge in the Tc4 cycle. In the write cycle, the write data
is output simultaneously with the write command. After the write command with the auto-
precharge is output, the Trw1 cycle that waits for the auto-precharge initiation is followed by the
Tap cycle that waits for completion of the auto-precharge induced by the WRITA command in the
SDRAM. In the Tap cycle, a new command will not be issued to the same bank. However, access
to another CS space or another bank in the same SDRAM space is enabled. The number of Trw1
cycles is specified by the TRWL1 and TRWL0 bits in CS3WCR. The number of Tap cycles is
specified by the TRP1 and TRP0 bits in CS3WCR.
Rev. 1.00 Dec. 27, 2005 Page 419 of 932
REJ09B0269-0100
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