HD6417712BPV Renesas Electronics America, HD6417712BPV Datasheet - Page 483

• Manufacturer Part Number: HD6417712BPV
• Description: MPU 1.5/3.3V 0K PB-FREE 256-BGA
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH Ethernetr

Specifications of HD6417712BPV

• Core Processor: SH-3 DSP
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: EBI/EMI, Ethernet, FIFO, SCI, SIO
• Peripherals: DMA, POR, WDT
• Number Of I /o: 24
• Program Memory Type: ROMless
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 1.4 V ~ 1.6 V
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 256-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -

• Deep power-down mode
If the RMODE bit of the SDCR is set to 1 while the DEEP and RFSH bits of the SDCR are set to
1, the low-power SDRAM enters the deep power-down mode. If the RMODE bit is cleared to 0,
the CKE signal is pulled high to cancel the deep power-down mode. Before executing an access
after returning from the deep power-down mode, the power-up sequence must be re-executed.
A12/A11*
The low-power SDRAM supports the deep power-down mode as a low-power consumption
mode. In the partial self-refresh function, self-refresh is performed on a specific area. In the
deep power-down mode, self-refresh will not be performed on any memory area. This mode is
effective in systems where all of the system memory areas are used as work areas.
D31 to D0
A25 to A0
DACKn*
DQMxx
RD/WR
BA1*
BA0*
CKIO
CSn
RAS
CAS
BS
3
1
2
4
Notes: 1. Address pin to be connected to the BA1 pin of SDRAM.
2. Address pin to be connected to the BA0 pin of SDRAM.
3. Address pin to be connected to the A10 pin of SDRAM.
4. The waveform for DACKn is when active low is specified.
PALL
Tp
Tpw
Figure 12.30 EMRS Command Issue Timing
REF
Trr
Trc
Trc
Hi-Z
REF
Trr
Trc
Rev. 1.00 Dec. 27, 2005 Page 439 of 932
Section 12 Bus State Controller (BSC)
Trc
Tmw
MRS
Tnop
Temw
EMRS
REJ09B0269-0100
Tnop