HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 15

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Item
20.2.6 Flash
Memory
Characteristics
Table 20.19 Flash
Memory
Characteristics
20.1 Electrical
Characteristics of
Mask ROM Version
(H8S/2319,
H8S/2318,
H8S/2317S,
H8S/2316S,
H8S/2315, H8S/2314)
and ROMless Version
(H8S/2312S)
20.2.6 Flash Memory
Characteristics
Table 20.19 Flash
Memory
Characteristics
20.3.2 DC
Characteristics
Table 20.21 DC
Characteristics
Page
848
817
849
850
853
Revision (See Manual for Details)
"⎯Preliminary⎯" deleted from table 20.19
Section 20.1 title amended
Table 20.19 amended
Notes 7 to 9 added
Notes: 7. Minimum number of times for which all characteristics
are guaranteed after rewriting (Guarantee range is 1 to
minimum value).
8. Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
9. Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
Table 20.21 amended
Note 5 added
Note: 5. Applies on condition that the RES pin is low level at
power on.
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming Wait time after SWE bit setting *
Item
VCC start voltage *
VCC rising edge *
1
*
3
*
6
1
5
9
*
5
2
*
4
Symbol
VCC
SVCC
Rev.7.00 Feb. 14, 2007 page xiii of xxxii
START
1
—
Min
—
N
t
Symbol
t
t
x
P
E
DRP
WEC
—
—
Typ
—
—
Min
100 *
10
1
7
10
50
10000 *
—
—
Typ
MaxU
0.4
10
8
REJ09B0089-0700
Max
200
1000
—
—
—
Unit
ms/
128 bytes
ms/block
Times
Years
μs
V
ms/V
nit
Test
Conditions
Test
Conditions