HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 657

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

17.11.10 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
• When performing programming using PROM mode on a chip that has been
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
17.12
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
PROM mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas Technology microcomputer device type with 256-kbyte on-chip flash memory
(FZTAT256V3A) or the Renesas Technology microcomputer device type with 512-kbyte on-chip
flash memory (FZTAT512V3A).
Do not select the HN27C4096 setting for the PROM programmer, and only use the specified
socket adapter. Failure to observe these points may result in damage to the device.
Powering on and off (see figures 17.30 to 17.32): Do not apply a high level to the FWE pin until
V
When applying or disconnecting V
the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
CC
erasing before auto-programming.
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
has stabilized. Also, drive the FWE pin low before turning off V
2. Auto-programming should be performed once only on the same address block.
Flash Memory Programming and Erasing Precautions
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
Additional programming cannot be carried out on address blocks that have already
been programmed.
CC
power, fix the FWE pin low and place the flash memory in
Rev.7.00 Feb. 14, 2007 page 623 of 1108
CC
.
REJ09B0089-0700
Section 17 ROM