HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 679

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

17.14.3 Erase Block Register 1 (EBR1)
EBR1 is an 8-bit register that specifies the flash memory erase area block by block. EBR1 is
initialized to H'00 by a reset, in hardware standby mode and software standby mode, and the
SWE1 bit in FLMCR1 is not set. When a bit in EBR1 is set, the corresponding block can be
erased. Other blocks are erase-protected. Set only one bit in EBR1 and EBR2 together (setting
more than one bit will automatically clear all EBR1 and EBR2 bits to 0). When on-chip flash
memory is disabled, a read will return H'00 and writes are invalid.
The flash memory block configuration is shown in table 17.28.
Bit
EBR1
Initial value :
R/W
:
:
R/W
EB7
7
0
R/W
EB6
6
0
R/W
EB5
5
0
EB4
R/W
4
0
Rev.7.00 Feb. 14, 2007 page 645 of 1108
R/W
EB3
3
0
R/W
EB2
2
0
REJ09B0089-0700
Section 17 ROM
R/W
EB1
1
0
EB0
R/W
0
0