HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 637

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Table 17.12 Software Protection
Item
SWE bit protection
Block specification
protection
Emulation protection •
17.8.3
In error protection, an error is detected when MCU runaway occurs during flash memory
programming/erasing, or operation is not performed in accordance with the program/erase
algorithm, and the program/erase operation is aborted. Aborting the program/erase operation
prevents damage to the flash memory due to overprogramming or overerasing.
If the MCU malfunctions during flash memory programming/erasing, the FLER bit is set to 1 in
FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, EBR1, and EBR2
settings are retained, but program mode or erase mode is aborted at the point at which the error
occurred. Program mode or erase mode cannot be re-entered by re-setting the P or E bit. However,
PV and EV bit setting is enabled, and a transition can be made to verify mode.
FLER bit setting conditions are as follows:
• When flash memory is read during programming/erasing (including a vector read or instruction
• Immediately after exception handling (excluding a reset) during programming/erasing
• When a SLEEP instruction (including software standby) is executed during
fetch)
programming/erasing
Error Protection
Description
•
•
•
Clearing the SWE bit to 0 in FLMCR1 sets
the program/erase-protected state for all
blocks
(Execute in on-chip RAM or external
memory.)
Erase protection can be set for individual
blocks by settings in erase block registers 1
and 2 (EBR1, EBR2).
Setting EBR1 and EBR2 to H'00 places all
blocks in the erase-protected state.
Setting the RAMS bit to 1 in the RAM
emulation register (RAMER) places all blocks
in the program/erase-protected state.
Rev.7.00 Feb. 14, 2007 page 603 of 1108
Program
Yes
—
Yes
Functions
REJ09B0089-0700
Section 17 ROM
Erase
Yes
Yes
Yes