HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 771

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 ROM
The difference between the erasing procedures in user program mode and user boot mode depends
on whether the MAT is switched or not as shown in figure 17.74.
MAT switching is enabled by writing a specific value to FMATS. However note that while the
MATs are being switched, the LSI is in an unstable state, e.g. access to a MAT is not allowed until
MAT switching is completed finished, and if an interrupt occurs, from which MAT the interrupt
vector is read from is undetermined. Perform MAT switching in accordance with the description
in section 17.27, Switching between User MAT and User Boot MAT.
Except for MAT switching, the erasing procedure is the same as that in user program mode.
The area that can be executed in the steps of the user procedure program (on-chip RAM, user
MAT, and external space) is shown in section 17.29.3, Procedure Program and Storable Area for
Programming Data.
Rev.7.00 Feb. 14, 2007 page 737 of 1108
REJ09B0089-0700