HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 599

IC H8S MCU FLASH 256K 100-QFP

HD64F2318VTE25

Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2318VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
17.1
This LSI has 512, 384, 256, or 128 kbytes of on-chip flash memory, or 512, 384, 256, 128, or 64
kbytes of on-chip mask ROM. The ROM is connected to the bus master via a 16-bit data bus,
enabling both byte and word data to be accessed in one state. Instruction fetching is thus speeded
up, and processing speed increased.
The on-chip ROM is enabled and disabled by means of the mode pins (MD2 to MD0) and the
EAE bit in BCRL.
The flash memory version of the chip can be erased and programmed with a PROM programmer,
as well as on-board.
17.1.1
Figure 17.1 shows a block diagram of 512 kbytes of on-chip ROM.
Overview
Block Diagram
Figure 17.1 Block Diagram of ROM (512 kbytes)
H'07FFFE
H'000000
H'000002
Section 17 ROM
Internal data bus (upper 8 bits)
Internal data bus (lower 8 bits)
Rev.7.00 Feb. 14, 2007 page 565 of 1108
H'07FFFF
H'000001
H'000003
REJ09B0089-0700
Section 17 ROM

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