HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 883

IC H8S MCU FLASH 256K 100-QFP

HD64F2318VTE25

Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2318VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
20.2.6
Table 20.19 Flash Memory Characteristics
Condition B: V
Item
Programming time *
Erase time *
Reprogramming count
Data retention time *
Programming Wait time after SWE bit setting *
Erasing
Flash Memory Characteristics
1
*
3
*
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clearing *
Wait time after PSU bit clearing *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clearing *
Wait time after SWE bit clearing *
Maximum number of writes *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clearing *
Wait time after ESU bit clearing *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clearing *
Wait time after SWE bit clearing *
Maximum number of erases *
0 V, T
specifications), T
wide-range specifications)
6
CC
1
9
*
= 3.0 V to 3.6 V, AV
2
*
a
4
= 0°C to +75°C (program/erase operating temperature range: regular
a
= 0°C to +85°C (program/erase operating temperature range:
1
1
1
1
*
*
1
*
1
1
1
CC
*
4
6
4
1
1
1
1
6
1
1
1
1
1
1
= 3.0 V to 3.6 V, V
1
1
Symbol
t
t
N
t
x
y
z
α
β
γ
ε
η
θ
N
x
y
z
α
β
γ
ε
η
θ
N
P
E
DRP
WEC
(z1)
(z2)
(z3)
Rev.7.00 Feb. 14, 2007 page 849 of 1108
Min
100 *
10
1
50
5
5
4
2
2
100
1
100
10
10
20
2
4
100
7
Section 20 Electrical Characteristics
ref
Typ
10
50
10000 *
= 3.0 V to AV
8
Max
200
1000
30
200
10
1000 *
10
100
5
Unit
ms/
128 bytes
ms/block
Times
Years
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
CC
REJ09B0089-0700
, V
SS
= AV
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional-
program-
ming time
wait
SS
=

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