HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 654
HD64F2318VTE25
Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2318VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 17 ROM
17.11.7 Status Read Mode
• Status read mode is used to identify what type of abnormal end has occurred. Use this mode
• The return code is retained until a command write for other than status read mode is
Table 17.21 AC Characteristics in Status Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
OE output delay time
Disable delay time
CE output delay time
WE rise time
WE fall time
Rev.7.00 Feb. 14, 2007 page 620 of 1108
REJ09B0089-0700
I/O
Note: I/O
when an abnormal end occurs in auto-program mode or auto-erase mode.
performed.
A
7
18
to I/O
to A
WE
OE
CE
3
0
0
and I/O
CC
= 3.3 V ±0.3 V, V
2
are undefined.
Figure 17.28 Status Read Mode Timing Waveforms
t
ces
t
f
t
ds
t
wep
H'71
Symbol
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
oe
df
ce
r
f
t
ceh
t
r
SS
t
dh
= 0 V, T
t
nxtc
t
ces
t
f
a
t
ds
Min
20
0
0
50
50
70
—
—
—
—
—
= 25°C ±5°C
t
wep
H'71
t
ceh
t
r
t
dh
t
nxtc
Max
—
—
—
—
—
—
150
100
150
30
30
t
ce
t
oe
Unit
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
df
t
nxtc
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