HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 732

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 ROM
(1) Flash Code Control and Status Register (FCCS)
FCCS is configured by bits which request the error occurrence during programming or erasing
flash memory and the download of on-chip program.
Bit 7—Reserved: This bit is always read as 1. The write value should always be 1.
Bits 6 and 5—Reserved: These bits are always read as 0. The write value should always be 0.
Bit 4—Flash Memory Error (FLER): Indicates an error occurs during programming and erasing
flash memory.
When FLER is set to 1, flash memory enters the error protection state.
This bit is initialized at a power-on reset or in hardware standby mode.
When FLER is set to 1, high voltage is applied to the internal flash memory. To reduce the
damage to flash memory, the reset must be released after the reset period of 100 μs which is
longer than normal.
Bit 4
FLER
0
1
Bits 3 to 1—Reserved: These bits are always read as 0. The write value should always be 0.
Rev.7.00 Feb. 14, 2007 page 698 of 1108
REJ09B0089-0700
Bit
Initial value :
R/W
:
:
Description
Flash memory operates normally
Programming/erasing protection for flash memory (error protection) is invalid.
[Clearing condition] At a power-on reset or in hardware standby mode
Indicates an error occurs during programming/erasing flash memory.
Programming/erasing protection for flash memory (error protection) is valid.
[Setting condition] See section 17.25.3, Error Protection.
—
R
7
1
—
R
6
0
—
R
5
0
FLER
R
4
0
—
R
3
0
—
R
2
0
—
R
1
0
(Initial value)
(R)/W
SCO
0
0