HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 646

• Manufacturer Part Number: HD64F2318VTE25
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of HD64F2318VTE25

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 ROM
Table 17.14 Settings for Each Operating Mode in Programmer Mode
Mode
Read
Output disable
Command write
Chip disable *
Legend:
H:
L:
Hi-Z: High impedance
×:
Notes: 1. Chip disable is not a standby state; internally, it is an operation state.
Table 17.15 Programmer Mode Commands
Command Name
Memory read mode
Auto-program mode
Auto-erase mode
Status read mode
Legend:
RA: Read address
PA: Program address
×:
Notes: 1. In auto-program mode, 129 cycles are required for command writing by a simultaneous
Rev.7.00 Feb. 14, 2007 page 612 of 1108
REJ09B0089-0700
Don’t care
High level
Low level
Don’t care
2. Ain indicates that there is also address input in auto-program mode.
3. For command writes when making a transition to auto-program or auto-erase mode,
2. In memory read mode, the number of cycles depends on the number of address write
input a high level to the FWE pin.
128-byte write.
cycles (n).
1
FWE
H or L
H or L
H or L *
H or L
1 + n
129
2
2
Number
of Cycles
3
CE
L
L
L
H
Write
Write
Write
Write
Mode
OE
L
H
H
×
×
×
×
×
1st Cycle
Address Data
Pin Names
WE
H
H
L
×
H'00
H'40
H'20
H'71
Read
Write
Write
Write
Mode
I/O
Data output
Hi-Z
Data input
Hi-Z
7
to I/O
2nd Cycle
RA
PA
×
×
Address Data
0
A
Ain
×
Ain *
×
18
to A
2
Dout
Din
H'20
H'71
0