HD64F2318VTE25 Renesas Electronics America, HD64F2318VTE25 Datasheet - Page 717

IC H8S MCU FLASH 256K 100-QFP

HD64F2318VTE25

Manufacturer Part Number
HD64F2318VTE25
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of HD64F2318VTE25

Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
• When performing programming using PROM mode on a chip that has been
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
2. Auto-programming should be performed once only on the same address block.
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
Additional programming cannot be carried out on address blocks that have already
been programmed.
Rev.7.00 Feb. 14, 2007 page 683 of 1108
REJ09B0089-0700
Section 17 ROM

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